The ion beam etching the materials for micro- and nanotechnologies

The analysis of the ion-beam etching rates of the materials used for manufacturing the integrated circuits is carried out. The etching rate-time functions and etching rate - ion beam current functions are presented. The results show that the current increasing involves significant increase of sputtering and redeposition effects. Based on results the most suitable ion beam etching parameters for subsequent correction of experimental integrated circuits are determined.