Broadband Noise Performance of Heterogeneously Integrated InP BiCMOS DHBTs

The noise performance of an InP BiCMOS process is presented. The process builds on IBM 90-nm RF CMOS and features heterogeneously integrated 250-nm InP DHBTs with f
_t
/fmax values of ~300 GHz. Noise models have been extracted and the predicted performance agrees well with measurement. The results indicate that this technology is an excellent option for future millimeter-wave low-noise applications.