Impact of Sn incorporation on low temperature growth of polycrystalline-Si1−xGex layers on insulators

The incorporation of Sn into Si
1−x
Ge
x
layer effectively enhances the crystallization at low temperature annealing. However, Sn precipitation occurs in Si
1−x−y
Ge
x
Sn
y
with a high Sn content of 10% and the grain size in the poly-Si
1−x−y
Ge
x
Sn
y
is as small as the Si
1−x
Ge
x
case. On the other hand, the grain size of Si
1−x−y
Ge
x
Sn
y
with a Sn content of 2% grows larger than the Si
1−x
Ge
x
case, which leads to increasing the hole mobility of poly-Si
1−x−y
Ge
x
Sn
y
.