Design and analysis of MoS2-based MOSFETs for ultra-low-leakage dynamic memory applications

In this work, we describe the design space required to realize two-dimensional (2D) MoS
₂
low-leakage MOSFETs. We combine TCAD electrostatic simulations with an analytical transport model to predict the subthreshold performance of MoS
₂
MOSFETs. We further apply this model to a dynamic memory cell design and benchmark the performance advantages compared to conventional low-leakage silicon technology.