Scaling analysis of in-plane and perpendicular anisotropy magnetic tunnel junctions using a physics-based model

This paper presents a comprehensive study on the scalability of STT-MRAM based on various MTJ technologies: namely, in-plane MTJ (IMTJ), crystal perpendicular MTJ (c-PMTJ), and interface perpendicular MTJ (i-PMTJ). For a practical analysis, our simulation model captures key physics of STT switching in various MTJs by incorporating dimension-dependent effective anisotropy field (H
_Keff
) into the Landau-Lifshitz-Gilbert (LLG) equation and considering realistic material parameters.