Ultrahigh Sensitivity Self-Amplification Phototransistor Achieved by Automatic Energy Band Lowering Behavior

In this paper, amorphous InGaZnO
₄
thin-film transistors with an asymmetric structure exhibit ultraviolet (UV) light sensing property. At the offset region near the drain electrode, the extended active layer plays the role of a resistor. However, the ON-state current is obviously reduced with increasing offset length at the offset region near the source electrode and the characteristics cannot be turned ON when offset length is over 4 μm. After exposure to UV light, photogenerated holes-induce source barrier lowering and then amplifying the photocurrent response. Therefore, the devices in this paper reach a high-ON/OFF ratio of UV sensitivity to 10
⁶
.