Back channel etch oxide TFT on plastic substrate for the application of high resolution TFT-LCD

We present high performance back channel etch (BCE) oxide TFT of which overlap capacitance between source/drain and gate is minimized. With considering application to the plastic LCD, we fabricated BCE TFT under 250
^o
C with PECVD SiN
_x
/PEALD SiO
₂
gate insulator and its mobility, S.S, V
_th
are 28.7 cm
²
/V.s, 0.1 V/dec, and 1.06 V, respectively. Its V
_th
shift under positive bias stress for 10,000 seconds is 0.75 V at 20V. BCE TFT fabricated on transparent GFRHybrimer film which has no retardation showed mobility of 19.1 cm
²
/V.s.