Stack engineering for ReRAM devices performance improvement

Al/W:AlO
_x
/WO
_y
/W and Pt/AlO
_δ
/Ta
₂
O
_5-x
/TaO
_y
/Pt multiple layers ReRAM devices have been fabricated and carefully studied. Experimental results exhibit significant performance improvement through the insertion of AlO
_x
layer between the switching layer and the top electrode. Operation current is remarkably reduced, ON/OFF ratio is greatly increased, and stable multi-level operations have been successfully achieved. Multiple layers stack engineering has been proved as an efficient method to improve the performances of ReRAM devices.