Universal NBTI model and its application for high frequency circuit simulation

An NBTI compact model considering the interface-state generation and the hole-trapping mechanisms has been proposed and evaluated for many different materials and processes. 8 model parameters are able to describe universal characteristics of the MOSFET degradation simply as a function of the gate oxide field (E
ox
). By implementing the NBTI degradation model into the compact model HiSIM, the circuit delay degradation is predicted, where the interface state generation dominates the degradation at low frequency operation, whereas the hole-trapping dominates under high frequency condition.