Comparison of critical current filaments in IGBT short circuit and during diode turn-off

Device simulations of two-dimensional structures with a huge lateral extension indicate that the combination of lateral current flow and a vertical reduction of space-charge region are necessary for the filament formation during the short-circuit operation of IGBTs and the turn-off of diodes. The shape of the electric-field distribution is introduced as new criterion to estimate the rising branch of the short-circuit destruction curve in the I
c
-V
ce
SOA-diagram. The impact of the stray inductance L
stray
and the gate resistor R
G
on the short-circuit destruction limit are experimentally investigated. The presented results allow a deeper understanding of the different electrical short-circuit failure mechanisms (turn-on, quasi-stationary state, turn-off) and their relation to one another.