Millimeter-Wave In Situ Tuner: An Efficient Solution to Extract the Noise Parameters of SiGe HBTs in the Whole 130–170 GHz Range

SiGe HBT noise parameters ( NF
_min
, R
_n
and Γ
_opt
) are for the first time extracted in the entire 130 - 170 GHz frequency range. This achievement is realized using a D-band on-chip source-pull system, which includes an impedance tuner integrated with the transistor under test. On-wafer noise power measurements on this system were performed for each tuner impedance state, from which are extracted the transistor noise parameters in the complete D-band.