FEDRAM: A capacitor-less DRAM based on ferroelectric-gated field-effect transistor

A capacitor-less DRAM cell based on ferroelectric-gate memory transistor structure, FErroelectric-DRAM (FEDRAM), is introduced. Compared to the conventional DRAM cell, it offers much simpler cell structure, longer retention time, better scalability, and lower power consumption. Cell size of 4F
²
can be realized. It is also most suitable for embedded applications. Recent developments of the HfO
₂
-based ferroelectrics have overcome the shortcomings of PZT and SBT for FEDRAM technology, and make the commercialization of FEDRAM much closer to reality.