Surface treatment against bromine defectivity in plasma etch reactor

This paper evaluates two treatment processes to reduce HBr in plasma etch reactor. The bromine concentration is measured by a total X-Ray fluorescence (TXRF) technique. The first treatment is based on an outgassing effect by heating and the second on a plasma etch surface treatment. Both treatments can lead to a reduction by a factor 20 of the bromine concentration. The electrical impact of the plasma needs to be evaluated.