A submicrometer MOS transistor I-V model for circuit simulation

A MOSFET I-V model (MOSTSM) that is composed of simple analytical equations applicable down to a 0.5- mu m MOSFET operation is proposed. This model provides enhanced performance with respect to gate electric field effects on channel conductance and channel-length modulation in saturation operation. Subthreshold conduction is modeled, and simple and accurate geometrical effect (channel length; L) formulations for the model equations are developed. Features of the model are channel-length dependency of threshold voltage and effective channel conductance. A formulation of body factor on device threshold (K/sub b/) is proposed as a function of channel length. Experiments were conducted using various devices to demonstrate the model accuracy. The experimental results show that the MOSTSM model ensures curve-fitting accuracy within 1% for maximum average error over biases, even when the geometry effects are included. The devices used in the experiments were in the 0.5-2.0- mu m range of CMOS fabrication technology.<
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