A simulation of 3-axis magnetotransistor based on the carrier recombination — Deflection effect

This article presents 3 axis magnetotransistor based on the carrier recombination and deflection effect for detecting the magnetic field in B
X
, B
Y
and B
Z
direction. The structure composes of four magnetotransistors along with x-axis and y-axis that has a common emitter while all collectors and bases are independent. The output is in the form of difference current of collector and base ΔI
CB
. For vertical field detection, the magnetotransistor uses the carrier deflection of the deviation collector current and recombination base current as ΔI
CB
. For lateral field detection B
X
and B
Y
it uses a pair of transistors that emitter biased current perpendicular to magnetic field. The output response is the difference current between collector of one and the base current of the another of a pair transistors as ΔI
C(1)B(3)
and ΔI
C(2)B(4)
for B
X
and B
y
, respectively. The sensitivity at I
E
5 mA, 0–1 T of B
X
, B
Y
and B
Z
direction are −0.0248 mA/T, −0.0248 mA/T and 0.0092 mA/T, respectively by TCAD Sentaurus simulation.