Selenium segregation optimization for 10 nm node contact resistivity

Contact resistivity (ρ
_C
) reduction for n-SD (source/drain) with Se
⁺
implant was evaluated for different integration schemes. It is found that Se
⁺
implant energy is one of the most critical process parameters for ρ
_C
improvement, achieved by placing the Se
⁺
peak close to silicide (TiSi
₂
or NiPtSi)/Si interface and minimized implant damage. Recovery of implant damage to silicide and n-SD region was achieved with millisecond laser anneal, while minimizing dopant deactivation. This work demonstrated a viable integration pathway to realize low ρ
_C
solution for n-SD for 10 nm node.