ALD Ta2O5 and Hf-doped Ta2O5 for BEOL compatible MIM

Decoupling MIM capacitors are typically implemented to reduce power supply noise. In this work we reported characterization of Atomic Layer Deposited (ALD) Ta
₂
O
₅
and Hf-doped Ta
₂
O
₅
high-k MIM capacitors. We investigated the impact of precursor choice and HfO
₂
addition on material, electrical and reliability characteristics of MIM capacitors. We demonstrated MIM capacitors with high capacitance density, low leakage and excellent reliability which are also suitable for BEOL integration.