Characterization of Micromachined On-Wafer Probes for the 600–900 GHz Waveguide Band

A micromachined on-wafer probe has been designed to facilitate the development of integrated circuits in the 600-900 GHz frequency range. The probe tip is fabricated on a 5-micrometer thick high-resistivity silicon substrate using a silicon-on- insulator fabrication process. This letter updates previous work on WR-1.2 wafer probes and presents for the first time the full RF characterization of the probe. These are the first reported on-wafer measurements above 750 GHz.