A 69–81 GHz power amplifier using 90nm CMOS technology

A 69–81 GHz broadband power amplifier (PA) is implemented on TSMC 90 nm 1P9M CMOS low power (LP) process. Utilizing wideband power matching topology, the PA achieves a flat measured output saturation power (P
sat
) of 12.5 ± 0.5 dBm from 70 to 80 GHz. The maximum P
sat
is 12.8 dBm at 76 GHz with peak power added efficiency (PAE) of 9.9% and the output 1-dB compression point (OP
1dB
) is 9.5 dBm. The PA exhibits flat gain performance of 20 ± 1.5 dB from 69 to 81 GHz which is suitable for 71–76 GHz E-band radio applications.