A TCAD-based roadmap for high-speed SiGe HBTs

Results of the 2013 technology roadmap for SiGe HBTs and associated benchmark circuits at mm-wave frequencies are presented. For the first time, the roadmap has been based on a seamless set of TCAD device simulation tools in order to obtain consistent compact model parameters for the complete transistor structure. All known transport, structural parasitic and temperature effects have been included in the results. The benchmark circuits, comprising an LNA, PA, VCO and CML RO, have been optimized for each technology node and a variety of commercially relevant frequencies.