Leakage Control in 0.4-nm EOT Ru/SrTiOx/Ru Metal-Insulator-Metal Capacitors: Process Implications

Leakage currents as low as 10
^-7
A/cm
²
at both 1 V and -1 V top electrode bias in the sub-0.4-nm equivalent SiO
₂
thickness range are demonstrated in Ru/SrTiO
_x
/Ru metal- insulator-metal capacitors in which the 8.5-nm SrTiO
_x
layer is deposited by atomic layer deposition. The top electrode material and deposition technique as well as the postdeposition anneal are crucial parameters to control the leakage, not only at negative, but also at positive top electrode bias.