A low distortion GaAs quadrature modulator IC

A low distortion GaAs quadrature modulator IC with on-chip active 90/spl deg/ phase-shifter was fabricated by using high linearity GaAs MESFET technology for wideband wireless applications. The IC showed OIP3 of +16 dBm, CLR of -40 dBc, and IRR of -40 dBc at supply voltage of 5.0 V, dissipation current of 70 mA and carrier frequency of 600 MHz. Excellent EVM smaller than 1.0% and ACPR of 60 dBc were also obtained for 4 Mbps QPSK signal with Pout of -10 dBm.