A Broadband Model Over 1–220 GHz for GSG Pad Structures in RF CMOS

A broadband model for ground-signal-ground (GSG) pad structures in RF CMOS is presented. The inductive parasitics of the S- and G-pads are considered. Fringe capacitors are introduced to capture the nonideal capacitive parasitics of the S-pad. A method to analytically extract the model parameters is proposed. The model renders excellent agreement with the measured and simulated data over 1-220 GHz, for a GSG pad structure manufactured in TSMC 90-nm RF CMOS technology.