Study of different spatial charge trapping distribution effect on off-state degradation at elevated temperature in power LDMOS

Different spatial charge trapping distribution effect on off-state degradation in power LDMOS was studied. Electron trapping phenomena is thermally grown in silicon dioxide (SiO
₂
). Due to charge can be trapped in the oxide, it can make structural defects, oxidation-induced defects, impurities, or other defects caused by Si-O-bond breaking process. This process can increase leakage current and cause off-state breakdown degradation. Many research already discussed about this mechanism, but not too much described about the distribution of charge trap into SiO
₂
. In this paper, the distribution of charge trap in SiO
₂
was studied in three different spatial charge distribution: Uniform, Gaussian, and Exponential using Sentaurus TCAD simulation software. This phenomena also studied at elevated temperature 150°C compare with room temperature.