DC characteristics of dual gated large area graphene MOSFET

This work reports the DC characteristics of dual gated large area graphene metal oxide semiconductor field effect transistor (MOSFET). The sheet charge density dependent quantum capacitance is obtained self-consistently with considering the impurities concentration of the gate oxide layer. The potential profile as well as sheet charge density of graphene channel is calculated. The C-V and I-V characteristics are illustrated here. Finally, the velocity-field relation is shown.