Effect of QD size and band-offsets on confinement energy in InN QD heterostructure

Detailed theoretical analysis of how QD size variation and band-offset affects the confinement energy of InN QD is presented. Low dimensional structures show a strong quantum confinement effect, which results in shifting the ground state away from the band edge and discrete eigen-states. Graphically solving 1D Schrödinger ground quantized energy levels of electrons were computed and using Luttinger-Khon 4×4 Hamiltonian matrix ground quantized energy level of holes were determined. Our results allow us to tune dot size and band-offset to obtain required bandgap for InN based low dimensional device design.