SiC device new technology

SiC is known to be quite a perspective material for high-temperature electronics. However the disadvantage is the high temperature and the complexity of device formation technological process in comparison with Si. So the simplification of technology proves to be actual. This abstract presents information on our new low temperature technology for electronic devices on SiC without multilayer epitaxy. We studied the process of photostimulated diffusion, annealing and other processes used in semiconductor device technology. This brought to technology of ohmic contacts, Schottky barriers, p-n junction and MOS structures on SiC. The results witness that low temperature technology proposed can be successfully used for SiC MESFET and MOSFET devices.