Silicon carbide as a material for high temperature posistors

Elaboration of silicon carbide based material with a positive temperature coefficient of resistance (PTC) sufficient for operation as a posistor is possible using heteropolytype transitions with abrupt change of electrophysical properties. Material for high-temperature posistors with PTC values in the range 0.03-0.10 K/sup -1/ and working temperatures 300-1000/spl deg/C is obtained.