Asymmetric InGaAs/InP MOSFETs With Source/Drain Engineering

We have developed laterally asymmetric In
_0.53
Ga
_0.47
As/InP MOSFETs with different regrown contacts at the source (In
_0.53
Ga
_0.47
As) and the drain (InP). Introducing a wider bandgap material, InP, as the drain electrode, higher voltage gain g
_m
/g
_d
has been obtained with a reduced output conductance g
_d
and improved breakdown voltage V
_bd
. For L
_g
= 50 nm, a high oscillation frequency f
_max
= 300 GHz has been obtained using an InP drain. A gate-connected field-plate has been introduced, which contributes to the device saturation with better impact ionization/band-to-band tunneling immunity.