A y-parameter approach to the design of one-port negative resistance oscillators

The theory and design of a GaAs MESFET oscillator are presented. The oscillator is designed by the technique which utilizes readily available device and circuit Y parameters to predict oscillation conditions, stability, and noise performance. The simulation result shows that the oscillation frequency is 6.58 GHz with 11.392 dBm output power. The phase noise is −98.7 dBc at 100 kHz offset.