60 GHz high gain low noise amplifier using cascode noise reduction technique

This paper presents a high gain 60 GHz LNA (Low Noise Amplifier) using a 9 Metal Generic 90-nm TSMC CMOS technology for the 60 GHz mm-Wave (millimetre wave) WPAN. The noise reduction technique of CG (Common Gate) transistor of the cascode structure is proposed to improve noise performance. Due to the reduced noise feature of the CG transistor, cascode amplifier is adopted as a first stage amplifier which results in increased gain and stability. For the purpose of the wide dynamic range the circuit incorporates gain control mode which provides variable gain mode with improved input linearity. The designed LNA shows maximum 25.2 dB gain with the 3-dB frequency over 56 ~ 62 GHz. The gain control mode provides 14 dB of gain variation with the IP1dB (Input Referred Power 1dB Compression) -26 dBm at high gain and -11 dBm at low gain. The NF (Noise Figure) of the circuit is 5.2 dB under 19 mW power consumption.