Electrical properties of PbLaZrTiOx capacitors with conductive oxide buffer layer on Pt electrodes

Aluminum-doped zinc oxide (AZO) and indium tin oxide (ITO) were employed as a conductive oxide buffer layer on Pt(111) substrate by pulsed laser deposition (PLD). Then, PbLaZrTiOx (PLZT) thin films (thickness: 500 nm) were prepared by the sol-gel method. Finally, AZO and ITO was deposited by PLD as top electrodes with metal through mask having 50 ~ 500 μm diameter to evaluate ferroelectric properties. We measured polarization-voltage (P-V) hysteresis loops and evaluated fatigue behavior by applying 10 V, 100 μs pulse width and 1 ms interval cycles. Fatigue behavior of PLZT capacitors with AZO buffer layer (AZO/PLZT/AZO/Pt) was improved over 10
⁶
cycles, however, that was not with ITO buffer layer (AZO/PLZT/ITO/Pt).