Comparative study of electrical properties of PbLaZrTiOx capacitors with Al-doped ZnO and ITO top electrodes

PbLaZrTiOx (PLZT) thin films were deposited on Pt(111) substrate by the sol-gel method, then aluminum-doped zinc oxide (AZO) and indium tin oxide (ITO) top electrodes were deposited by pulsed laser deposition (PLD). We evaluated degradation characteristics by 3% hydrogen atmosphere annealing in 200°C, 1Torr. The polarization ratio of PLZT capacitors with 200 nm top electrodes thickness was maximum value at the same Pb contents. We also evaluated fatigue behavior by applying 10 V, 100 μs pulse width and 1 ms interval cycles. PLZT capacitors with AZO and ITO top electrodes were robust electrodes over 10
⁵
cycles compared with Pt top electrodes.