Analysis of temperature-dependent current-voltage characteristics for CIGSSe and CZTSSe thin film solar cells from nanocrystal inks

Thin film solar cells with CIGSSe and CZTSSe absorber layers fabricated from nanocrystal inks represent economically scalable technologies for alternative sources of energy. Although these two materials share similar properties important to functioning as a photovoltaic absorber, lab scale CIGSSe devices have achieved power conversion efficiencies 1.5 to 2 times higher than their CZTSSe counterparts. In the current work, CIGSSe and CZTSSe devices similarly processed from nanocrystal inks and exhibiting efficiencies of 14.2% and 9.2%, respectively, are characterized by temperature-dependent current-voltage (IVT) analysis to reveal limitations to CZTSSe device performance compared to CIGSSe.