Reactive ion etching optimization method based on orthogonal experiment

The orthogonal experiment is used for selecting parameters of the etching SIO
₂
equipment. The process applies etching uniformity and etching rate as evaluation indexes. The main factors influencing etching process are found out. Through further optimization, the advanced SIO
₂
etching is made to realize etching uniformity less than 5% and etching rate higher than 300nm/min.