On the optical absorption spectra of as-grown III–V quantum dot systems

Quantum dots (QDs) of III–V materials are being extensively used in optoelectronic devices such as lasers and detectors due to various advantages. Due to the inhomogeneous distribution of dot size, the optical absorption spectra of QD systems is not discrete. The spectrum is usually a Gaussian function because of the underlining size distribution of dots. QD systems are often subjected to thermal cyclings for tuning the absorption wavelength. These requires in-depth knowledge of the optical absorption of as-grown structures. This paper is an effort to model the absorption spectra of as-grown In
x
Ga
1−x
As/GaAs QD systems grown with growth interruption technique. We have emphasized on the Gaussian size distribution of dots for analyzing the interband absorption spectra of as-grown QD systems.