Advances in GaN technology and design for active arrays

Gallium Nitride HEMT technology has reached the maturity where it is reliably being deployed for both military and commercial applications. But, because of its extreme ruggedness, reliable high temperature operation, and high operational RF power density, GaN based amplifiers can offer both new capability and challenges for Phased Array Systems. This work will present the basics of GaN technology, amplifier design methodologies and tradeoffs, and comparisons to traditional GaAs technology for use in phased array T/R modules.