Effect of high-k gate materials on analog and RF performance of Double Metal Double Gate (DMDG) MOSFETs

Conventional MOSFETs has reached to their scaling limits due to the physical limitations, so alternative transistor structures and use of suitable materials is the subject of current research. In this paper, the analog and RF performance of Double Metal Double Gate (DMDG) MOSFETs are investigated for its suitability to be used for analog and RF applications. The different analog parameters like output conductance, transconductance, transconductance generation factor, early voltage and RF parameters like gate capacitance, cutoff frequency and maximum frequency of oscillation has been compared for the different gate oxide materials of DMDG MOSFETs. The DMDG MOSFETs using high-k oxides have been found to be suitable for analog and RF applications. The transient analysis of inverter circuit has also been done using 2D numerical simulations.