High performance Ge CMOS with novel InAlP-passivated channels for future sub-10 nm technology node applications

We report the first realization of high performance Ge CMOS using a novel InAlP passivation scheme. The large conduction band and valence band offsets between InAlP and Ge confine electrons and holes within the Ge channel for n-FETs and p-FETs, respectively. The InAlP cap reduces scattering due to high-K/InAlP interface traps and boosts carrier mobility. As a result, a record high electron mobility μ
_EFF
of ~958 cm
²
/V·s at N
_INV
of 6×10
¹¹
cm
^-2
was achieved for Ge(100) n-FETs, and a high peak hole mobility of ~390 cm
²
/V·s was obtained for Ge(100) p-FETs. High on-state currents I
_ON
of 39.5 μA/μm and 31.2 μA/μm were achieved at gate overdrive |V
_GS
-V
_TH
| = 1 V and |V
_DS
| = 1 V for the n-FETs and p-FETs, respectively, with a gate length L
_G
of ~3 μm. In addition, for the first time, this novel InAlP passivation technique was integrated into Ge n-FinFETs, and good control of short channel effects (SCEs) was achieved.