Sub-100 nm InGaAs quantum-well (QW) tri-gate MOSFETs with Al2O3/HfO2 (EOT < 1 nm) for low-power logic applications

This paper reports tri-gate sub-100 nm In
_0.53
Ga
_0.47
As QW MOSFETs with electrostatic immunity of S = 77 mV/dec., DIBL = 10 mV/V, together with excellent carrier transport of g
_{m, max}
> 1.5 mS/μm, at V
_DS
= 0.5 V. This result is the best balance of g
_{m, max}
and S in any reported III-V MOSFETs. In addition, extracted compact model parameter including (μ
₀
= 760 cm
²
/V-s and peak v
_x0
= 1.6×10
⁷
cm/s) indicate that InGaAs Tri-Gate MOSFETs would be a viable pathway to sub-10nm technology node.