Monolithically integrated 600-V E/D-mode SiNx/AlGaN/GaN MIS-HEMTs and their applications in low-standby-power start-up circuit for switched-mode power supplies

We have experimentally demonstrated monolithically integrated 600-V enhancement-/depletion-mode (E/D-mode) SiN
x
/AlGaN/GaN MIS-HEMTs that feature high drive current, high breakdown voltage, large gate swing, low ON-resistance, low OFF-state leakage, and low current collapse. By employing the integrated E/D-mode devices, a high-voltage low-standby-power start-up circuit for off-line switched-mode power supplies has been realized.