NW-TFET analog performance for different Ge source compositions

The analog performance of hetero-junction vertical NanoWire Tunnel FETs (NW-TFETs) with different Ge source compositions (27% and 46%) is studied and compared to Si source devices. Although the NW-TFETs with the highest amount of Ge at the source present the highest transconductance (lower bandgap and higher BTBT predominance), the NW-TFETs with 27% Ge source present a better intrinsic voltage gain (A
_V
) due to their better output conductance (less drain electric field penetration than for 46%). The Si source NW-TFET presented the worst analog behavior at lower gate bias. However, when V
_GS
increases, smaller is its A
_V
degradation making it equal or better than the value obtained for SiGe source devices, since in the former the Trap Assisted Tunneling (TAT) is predominant. The peculiar NW-TFET low frequency noise behavior is also presented.