Integrated passive devices using Al/BCB thin films

A new structure for thin film integrated passive devices using aluminum interconnection and photo-BCB dielectrics is introduced. The structure is capable of providing a range of capacitance values spanning four orders of magnitude, making it suitable for both digital and high frequency applications. The thin films are built on glass substrates in a 350/spl times/400 mm format to take advantage of the economy of scale that comes from such a format. The structure is described and preliminary characterization and reliability test results are summarized.