High frequency noise characterisation of graphene FET device

RF GFET devices have been processed on SiC wafer using Al
₂
O
₃
as a gate oxide. These devices have been characterised with DC, S parameter and high frequency noise measurement (NF50). The noise parameters have been extracted in order to evaluate the graphene material for RF applications. This GFET shows some potentialities for RF circuits with f
_T
=11.5GHz and NFmin=2.4 dB at 3GHz.