Reliable extraction of MOS interface traps from low-frequency CV measurements

An improved version of the low-frequency capacitance-voltage (LFCV) method for MOS interface trap extraction is presented. The rising edge of the gate-channel capacitance is used as a reliable reference for determining the surface potential, allowing a more accurate calculation of the trap energy. Also, a self-consistent Schrodinger-Poisson solver is employed to obtain a theoretical CV curve, accounting for quantization effects. It is shown that the improved method supplies better results than the conventional LFCV and high-low frequency methods.