A low-threshold polarization-controlled vertical-cavity surface-emitting laser grown on GaAs (311)B substrate

We have demonstrated a GaAs (311)B vertical-cavity surface-emitting laser (VCSEL) with a threshold current as low as 250 μA, which is the lowest value ever reported for that on non-(100) oriented substrates. Also, the fabricated VCSEL shows a stable polarization state for wide during current ranges and a large polarization-mode suppression ratio over 30 dB between the [233] and [011] axis modes at 5 mA. The electrical specific resistance of 1.2×10/sup -4/ /spl Omega//spl middot/cm/sup -2/ at the threshold was reasonably low due to carbon autodoping to AlAs in a p-type distributed Bragg reflector (DBR).