A novel topology of matching network for realizing broadband high efficiency continuous Class-F power amplifiers

This paper introduces a new matching topology in the design of approximated continuous Class-F PAs for obtaining high efficiency in wideband, and justifies this topology reasonable by analyzing waveforms at the current-generator and package plane of device. The real part of impedance in this proposed topology can achieve the characteristic of nearby zero Ohm (or a low value) in a broad frequency band, which match well with the real part of optimal second harmonic impedance of device at package plane. So this topology can realize reactive second harmonic impedance in wideband. In this paper, by taking the topology introducing above, and using the GaN HEMT device, the measured drain efficiency between 73% and 88.6% can be achieved from 1.4 to 2.5 GHz, over a 56.8% bandwidth, and 11.2-17.4 W output powers. According to the authors' knowledge, the measured results are better than the published results with respect to continuous Class-F power amplifiers.