Evaluation of HBT device linearity using advanced measurement techniques

With this work we address the linearity of HBT devices when operated at their optimum bias and matching conditions at baseband, fundamental and second harmonic. Using active harmonic load pull and pulsed I-V / s-parameter device characterization, the intrinsic linearity properties of SiGe and III-V based HBT devices are evaluated and compared. From this exercise the bias dependent C
_bc
behavior is identified as key differentiator for the linearity of the different technologies.