Influence of Fringe Field on Nano-Electromechanical (NEM) Memory Cells

The influence of fringe field on nano-electro-mechanical (NEM) memory cells has been investigated. Because fringe field effects become stronger with cells scaling down, it becomes more difficult to predict the characteristics of small-sized NEM memory cells accurately. In this paper, fringe field effects have been included into a finite-element model. The dependence of fringe field effects on cell parameters has also been evaluated.