High-Performance Metal-Insulator-Metal Tunnel Diode Selectors

We report on a novel high-performance metal-insulator-metal tunnel diode, with ultrathin atomic layer deposited Ta
₂
O
₅
, for bidirectional selector applications in resistive switching memory. The diode exhibits high drive current of over 10
⁵
A/cm
²
, high nonlinearity, and fast turn-on and turn-off times in the below-ns range. A very good uniformity for structures down to 40 nm size and excellent ac endurance is demonstrated, well exceeding the stand-alone nonvolatile memory requirements.